Contactless measurement of minority carrier lifetime and background carrier concentration in unintentionally doped GaAsSb for short-wave infrared detection

Transient microwave reflectance (TMR) measurements are used to characterize the minority carrier lifetime and background concentration of unintentionally doped (UID) Ga0.5As0.5Sb lattice matched InP at room temperature. A p-i-n sample is measured, with UID GaAsSb as intrinsic absorber. In addition GaAsSb, we determine doping a buried n+ layer. The measured lifetimes 20.5 ± 6.3 0.56 0.23 µs for respectively, comparable that InGaAs. For both layers, dominant recombination mechanisms Shockley–Read–Hall (SRH) Auger mechanisms. concentrations in good agreement capacitance–voltage (C–V) measurements, n0 = 1.81 0.61 × 1015 cm−3 by TMR 1.5 C–V layer ND 5.18 1.42 1017 3–4 An absorber-only structure was also report SRH lifetime, radiative coefficient, coefficient this sample.